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Present study includes an overview about problems and overcoming methods of micro and nano sized defects came out during production of crystalline silicon (c-Si) substrates for electronic applications. All surface treatment steps such as diamond wire saw (DWS), lapping, polishing, micro and nano sized shaping on surface are performed respectively. Defects occurred during and after the operations and reasons of these were investigated and given via the of scanning electron microscope (SEM), reflectance and roughness measurements. Solutions methods explored and results after application of solution methods were evaluated. Reasonable solutions were discovered in order to overcome the problems behind the production a defect-free Si substrate surface for many electronic applications.
International Conference of Advanced Materials and Manufacturing Technologies
ICAMT
Erhan Kayabasi
Savas OZTURK
Erdal CELIK
Huseyin Kurt